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Job Description
Join onsemi Reliability Physics Group and help us to study and improve the heart of any vertical SiC MOSFET – SiC / SiO2 interface. Such transistors are widely used for automotive applications, and, to guarantee the quality and reliability of our products to onsemi customers, we run various (accelerated) tests to check the shift of the characteristics of SiC MOSFETs due to different types of stress and propose different models to describe the corresponding processes and make extrapolations to use conditions. We also pay special attention to charge trapping processes at SiC / SiO2 interface and study them with ultra-fast bias temperature instability and charge pumping techniques.
Responsibilities
Taking part in the following measurements and corresponding data analysis:
BS in physics or electrical engineering.
onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world.
More details about our company benefits can be found here:
https://www.onsemi.com/careers/career-benefits
About The Team
We are committed to sourcing, attracting, and hiring high-performance innovators, while providing all candidates a positive recruitment experience that builds our brand as a great place to work.
Join onsemi Reliability Physics Group and help us to study and improve the heart of any vertical SiC MOSFET – SiC / SiO2 interface. Such transistors are widely used for automotive applications, and, to guarantee the quality and reliability of our products to onsemi customers, we run various (accelerated) tests to check the shift of the characteristics of SiC MOSFETs due to different types of stress and propose different models to describe the corresponding processes and make extrapolations to use conditions. We also pay special attention to charge trapping processes at SiC / SiO2 interface and study them with ultra-fast bias temperature instability and charge pumping techniques.
Responsibilities
Taking part in the following measurements and corresponding data analysis:
- ultra-fast bias temperature instability;
- charge pumping;
- gate oxide integrity;
- charge-to-breakdown.
BS in physics or electrical engineering.
- Basic experience in programming (Matlab, Python) is a plus.
- Strong understanding of solid state and semiconductor physics is a plus.
onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world.
More details about our company benefits can be found here:
https://www.onsemi.com/careers/career-benefits
About The Team
We are committed to sourcing, attracting, and hiring high-performance innovators, while providing all candidates a positive recruitment experience that builds our brand as a great place to work.
Key Skills
Ranked by relevance
python
matlab
cloud
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- Posted
- Jul 26, 2025
- Type
- Part-time
- Level
- Not Applicable
- Location
- Mechelen
- Company
- onsemi
Industries
Semiconductor Manufacturing
Categories
Engineering
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3 roles aligned with this opportunity
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2026-06-18
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